Inc6006as1

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August undefined, 2024

WebDownload INC6006AS1 Datasheet: Specifications. Isahaya Package: Micro: JEITA Package: JEDEC Package: TO-92S: AEC correspondence: Type: NPN: Collector to Emitter voltage?VCEO(V) 160: Collector current?IC(A) 0.1: Collector dissipation?PC(mW) 600: DC forward current gain hFE: 72 ? 330: Datasheet first page Image. WebINC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for eas y mounting. ・High voltage V. CEO = 160V ・Low voltage V. CE(sat) = 0.2V(MAX) ・Complementary ： INA6006AS1 . APPLICATION . High voltage switching.

Isahaya Electronics Corporation

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Isahaya Electronics Corporation

WebFOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO ETHERNET Datasheet(PDF) - List of Unclassifed Manufacturers - 2SC5482 Datasheet, FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO, Isahaya Electronics Corporation - 2SC5397 Datasheet, Isahaya Electronics … WebALLPARTS PARTS LIST [I] Korea HQ. : Rm 1707, 1st Block, Ace High Tech City, 3Ga 54-20, Munrae-dong, Yeongdeungpo-gu, Seoul, Korea. ( Tel : 82-2-2634-6328 Fax : 82-2-2634-7328 ) China Office. : Rm 704, A block, Huangdu square, #3008 Yitian road, Futian district, Shenzhen city, Guangdong. province, China ( Tel : 86-755-8321-2156~7 Fax : 86-755 ... WebSierra Wireless‘ 5G Managed Network Service which offers guaranteed performance and uptime for business-critical applications. Greenconn’s Newly-Launched 2.5mm Pitch … ray white real estate katanning

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Inc6006as1

WebScribd ist die weltweit größte soziale Plattform zum Lesen und Veröffentlichen. WebINC6006AS1 Datasheet, Equivalent, Cross Reference Search. Type Designator: INC6006AS1 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.6 W. …

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WebINA6006AS1 is a silicon PNP transistor. It is designed with high voltage. FEATURE ・High voltage VCEO = -150V ・Low voltage VCE(sat) = -0.5V(MAX) ・Small capacitance Cob=2.8pF(TYP) ・Complementary ： INC6006AS1 APPLICATION Hi-Fi Audio, High voltage switching. OUTLINE DRAWING UNIT：mm MAXIMUM RATING（Ta=25℃） WebFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type), INC6001AC1 Datasheet, INC6001AC1 circuit, INC6001AC1 data sheet : ISAHAYA, …

http://www.idc-com.cn/product/Search/Pdf/en/111/INA6006AS1/0/ WebFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE, INC6006AS1 Datasheet, INC6006AS1 circuit, INC6006AS1 data sheet : ISAHAYA, …

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WebINC6006AS1 Structure of Item Code Shipping form and package information Mounting Method Storage and handling instructions Precautions for use (lead bending) Precautions for Avoiding Static Electricity Things to be aware of …

Web・Complementary ： INC6006AS1 APPLICATION High voltage switching. OUTLINE DRAWING UNIT：mm MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER RATING … ray white real estate joondalupWebSSPRDJ4228-C MOSFET . Process : Trench ; Configuration : Dual ; Type : N ; VDSS (V) : 30 ; VGS (V) : #177; 20 ; RDS(on) (#937;) : 17 (m#937;) ; ID (A) : 25 ; PD (W) : 16.67 ; Package : DFN3x3-8DJ 25A, 30V, RDS(ON) 17m Dual N-Ch Enhancement Mode Power MOSFET . RoHS Compliant Product A suffix of -C specifies halogen lead-free . DESCRIPTION . The … ray white real estate kawanaWebAmazon カスタマー 5 居酒屋で働いているのですが、制服が私服+エプロンになり、ポケットがカンガルーポッケの様な大きくてびろんと広がってしまう物に変わったため、胸元のポケットに入れていたボールペンとメモ帳の行き場がなくなり、ハンディもポケットに入れると重たくて首がこるので ... simply sunday school ray white real estate kallangurWebINC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 … ray white real estate julie mahoneyWebHigh voltage VCEO = -150V Low voltage VCE(sat) = -0.5V(MAX) Small capacitance Cob=2.8pF(TYP) Complementary INC6006AS1. APPLICATION. PARAMETER Collector to … ray white real estate kardinyaWebMar 21, 2024 · Complete information for INTS6-AS1 gene (RNA Gene), INTS6 Antisense RNA 1, including: function, proteins, disorders, pathways, orthologs, and expression. GeneCards - The Human Gene Compendium simply superb citron fresh